Science Blog about Microelectronics of Fraunhofer IZM
Autorenprofil Ulrike Ganesh | Fraunhofer IZM

Prof. Dr.-Ing. Ulrike Ganesh

Prof. Dr. Ulrike Ganesh studied electrical engineering at the Technical University of Berlin from 1999 to 2005. She earned her doctorate there in cooperation with Credence Systems DCG (California, USA), on the topic of »Investigation of Laser Voltage Probing Signals in CMOS Transistors.« She received her doctorate in 2008 with the highest distinction (summa cum laude).

Her scientific career took her to the IHP in Frankfurt/Oder from 2008 to 2010 and then to IBM in New York as a postdoc from 2010 to 2012. She then worked in failure analysis at Qualcomm in San Diego. From 2016 on, she gained extensive management experience in chip development for the automotive industry at Robert Bosch before moving to the Federal Institute for Materials Research and Testing in 2020, where she headed the »Non-Destructive Testing« department.

Since August 2024, Prof. Ganesh has been co-director of Fraunhofer IZM alongside Prof. Martin Schneider-Ramelow, and she is a renowned expert in the field of characterization and fault analysis of advanced semiconductor technologies.

ulrike.ganesh@izm.fraunhofer.de